Method of selective removal of SiGe alloys

Details Method of selective removal of SiGe alloys Method of selective removal of SiGe alloys

2005-05-31

2005-05-31

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S439000

Reexamination Certificate

active

06900094

ABSTRACT:
A method is disclosed of forming buried channel devices and surface channel devices on a heterostructure semiconductor substrate. In an embodiment, the method includes the steps of providing a structure including a first layer having a first oxidation rate disposed over a second layer having a second oxidation rate wherein the first oxidation rate is greater than the second oxidation rate, reacting said first layer to form a sacrificial layer, and removing said sacrificial layer to expose said second layer.

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