Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-01
2005-02-01
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S391000, C257S393000, C257S394000
Reexamination Certificate
active
06849905
ABSTRACT:
An array of transistors includes a plurality of transistors, a plurality of word lines extending in a first direction and a plurality of bit lines extending in a second direction. Each transistor includes a source, a drain, a channel and a localized charge storage dielectric. A first transistor of the plurality of transistors and a second transistor of the plurality of transistors share a common source/drain. A first localized charge storage dielectric of the first transistor does not overlap the common source/drain and a second localized charge storage dielectric of the second transistor overlaps the common source/drain.
REFERENCES:
patent: 4281397 (1981-07-01), Neal et al.
patent: 5268319 (1993-12-01), Harari
patent: 5306935 (1994-04-01), Esquivel et al.
patent: 5640350 (1997-06-01), Iga
patent: 5991202 (1999-11-01), Derhacobian et al.
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6249454 (2001-06-01), Sung et al.
patent: 6258668 (2001-07-01), Lee et al.
patent: 6327182 (2001-12-01), Shum et al.
patent: 6486066 (2002-11-01), Cleeves et al.
patent: 20010055838 (2001-12-01), Walker et al.
patent: 20020028541 (2002-03-01), Lee et al.
patent: 20020142546 (2002-10-01), Kouznetsov et al.
The Fabrication and Characterization of EEPROM Arrays on Glass Using a Low-Temperature Poly-Si TFT Process, N.D. Young, et al., IEEE Transactions on Electron Devices, vol. 43, No. 11, Nov. 1996.
Institute of Electrical and Electronics Engineering, 2001 Digest of Technical Papers, vol. Forty-Four, ISSN 01Ch37177, pp. 423-424, Jan. 2001.
An Asymmetrical Lightly Doped Source Cell for Virtual Ground High-Density EPROM's, Kuniyoshi Yoshikawa, Member, IEEE, IEEE Transactions on Electron Devices, vol. 37, No. 4, Apr. 1990.
Fasoli Luca
Ilkbahar Alper
Scheuerlein Roy
Walker Andrew J.
Foley & Lardner LLP
Matrix Semiconductor Inc.
Wojciechowicz Edward
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