Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2005-05-31
2005-05-31
Auduong, Gene N. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Precharge
C365S154000
Reexamination Certificate
active
06901017
ABSTRACT:
A first amplifier amplifies voltage of a first local bit line connected to static memory cells. Precharging circuits for precharging a first global bit line connected to an output of the first amplifier supply a precharging current through both ends of the first global bit line, respectively. Since the precharging current flows through the first global bit line in both directions, electromigration criteria can be made looser than in cases where the current flows in one direction. This makes it possible to avoid a defect which occurs due to electromigration of the first global bit line. Since the first global bit line can be reduced in wiring width, it is possible to minimize the layout area. As a result, the semiconductor memory can be reduced in chip size with a reduction in chip cost.
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Arent & Fox PLLC
Auduong Gene N.
Fujitsu Limited
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