Method of manufacturing a semiconductor device by RTA...

Details Method of manufacturing a semiconductor device by RTA... Method of manufacturing a semiconductor device by RTA...

2005-05-17

2005-05-17

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S527000, C438S768000, C438S770000, C438S787000

Reexamination Certificate

active

06893981

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device. A gate is formed on a given region of a semiconductor substrate. Spacers are then formed using DCS-HTO or TEOS. Hydrogen remaining within the spacers is removed by a RTA process under nitrogen atmosphere and nitride films are formed on the spacers at the same time. In case of a flash memory device, a retention characteristic can be improved. A process of forming the nitride film additionally required in a subsequent contact hole formation process may be omitted. The sheet resistance of the gate could be improved by promoting growth of a crystal grain of a tungsten silicide film constituting a control gate.

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patent: 10-129838 (1998-05-01), None

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