Semiconductor device having a reduced leakage current and a...

Details Semiconductor device having a reduced leakage current and a... Semiconductor device having a reduced leakage current and a...

2005-05-03

2005-05-03

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S396000, C438S303000, C438S595000, C438S241000

Reexamination Certificate

active

06887754

ABSTRACT:
A semiconductor device includes a nitride film between a gate electrode and an ohmic electrode contacting to a diffusion region adjacent to the gate electrode, at least on a side of the gate electrode facing the ohmic electrode.

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