Reduced mask count process for manufacture of mosgated device

Details Reduced mask count process for manufacture of mosgated device Reduced mask count process for manufacture of mosgated device

2005-05-17

2005-05-17

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S278000, C438S301000

Reexamination Certificate

active

06893923

ABSTRACT:
A process for forming a power MOSFET enables the connection a metal gate electrode to the conductive polysilicon gates in the active area without an additional mask step. In the process, a groove is formed in the field oxide during the active area mask step. Conductive polysilicon is then formed over the active area and into the groove. At least one window is formed over the groove along with the mask window for forming the channel and source implant windows, and the polysilicon is etched to the silicon surface in the active area, but a strip is left in the groove. This strip is contacted by gate metal during metal deposition. Thus, gate metal is connected to the polysilicon without an added mask step.

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