Method of fabricating a zener diode chip for use as a shunt...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S328000, C438S380000, C438S983000

Reexamination Certificate

active

06900093

ABSTRACT:
A process for fabricating Zener diodes that does not require the use of photomasks. An oxide layer is grown on a silicon substrate which is doped with an N-type dopant. The substrate is subsequently implanted with a P-type dopant, forming a PN junction. The substrate is then metallized for connecting the Zener diode to other circuit components. Advantageously, the substrate may be scribed after processing, before processing, or anytime during processing. Back-to-back Zener diodes formed in this manner are used as shunt circuits across individual lamp sockets in series-wired Christmas light strings to maintain current flow to each of the lamps of the light string when one or multiple lamps fail.

REFERENCES:
patent: 1024495 (1912-04-01), Booth
patent: 2072337 (1937-03-01), Kamm
patent: 2760120 (1956-08-01), Fisherman
patent: 3639805 (1972-02-01), Muench et al.
patent: 3912966 (1975-10-01), Harnden, Jr.
patent: 4349394 (1982-09-01), Wei
patent: 4450382 (1984-05-01), Sawka et al.
patent: 4682079 (1987-07-01), Sanders et al.
patent: 4727449 (1988-02-01), Fleck
patent: 5006724 (1991-04-01), Liu
patent: RE34717 (1994-09-01), Sanders et al.
patent: 5379214 (1995-01-01), Arbuckle et al.
patent: 5539317 (1996-07-01), Janning
patent: 5989963 (1999-11-01), Luning et al.
patent: 6107664 (2000-08-01), Quoirin et al.
patent: 6417061 (2002-07-01), Kravtchenko et al.
patent: 6580182 (2003-06-01), Janning
patent: 427021 (1965-06-01), None
patent: 884370 (1943-11-01), None

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