Method of making a memory structure having a multilayered...

Details Method of making a memory structure having a multilayered... Method of making a memory structure having a multilayered...

2005-10-18

2005-10-18

Abraham, Fetsum (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S573000, C438S608000, C438S216000, C438S029000

Reexamination Certificate

active

06955959

ABSTRACT:
The present invention relates to a structure of a capacitor, in particular using niobium pentoxide, of a semiconductor capacitor memory device. Since niobium pentoxide has a low crystallization temperature of 600° C. or less, niobium pentoxide can suppress the oxidation of a bottom electrode and a barrier metal by heat treatment. However, according to heat treatment at low temperature, carbon incorporated from CVD sources into the film is not easily oxidized or removed. Therefore, a problem that leakage current increases arises. As an insulator film of a capacitor, a layered film composed of a niobium pentoxide film and a tantalum pentoxide film, or a layered film composed of niobium pentoxide films is used. By the use of the niobium pentoxide film, the dielectric constant of the capacitor can be made high and the crystallization temperature can be made low. By multiple-stage formation of the dielectric film, leakage current can be decreased.

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patent: 6576928 (2003-06-01), Hiratani et al.
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patent: 2002-164516 (2002-06-01), None

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