Semiconductor memory device having cylinder-type stacked...

Details Semiconductor memory device having cylinder-type stacked... Semiconductor memory device having cylinder-type stacked...

2005-03-29

2005-03-29

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000

Reexamination Certificate

active

06873002

ABSTRACT:
The semiconductor memory device comprises a glue layer defining a cylinder shell, a bottom electrode made of a material of the platinum group and covering the inner face and the outer face of the cylinder shell, a dielectric layer formed over the bottom electrode, and a top electrode positioned over the dielectric layer. The bottom electrode, the dielectric layer, and the top electrode comprise a cell capacitor.

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