Method of manufacturing high-k gate dielectric by use of...

Details Method of manufacturing high-k gate dielectric by use of... Method of manufacturing high-k gate dielectric by use of...

2005-07-05

2005-07-05

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S591000

Reexamination Certificate

active

06913961

ABSTRACT:
Disclosed is a method of manufacturing a high-k gate dielectric, characterized in that an annealing process in a forming gas atmosphere, corresponding to a final step of a manufacturing process of a semiconductor device based on MOSFET fabrication techniques, is applied for a high-k gate dielectric-containing semiconductor device, under high pressure, instead of conventional atmospheric pressure, whereby passivation effects of interface charges and fixed charges of the semiconductor device can be maximized even at relatively low temperatures.

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Onishi, Katsunori et al., “Improvement of Surface Carrier Mobility of HfO2 MOSFETs by High-Temperature Forming Gas Annealing”, Feb. 2003, IEEE Transactions on Electron Devices, vol. 50, No. 2, p. 384-390.
Lee, Jack C., “Hf-based High-K Dielectrics”, The University of Texas at Austin, Austin TX, IWGI 2003, Tokyo, p. 4-9.
Onishi, Katsunori et al., “Bias-Temperature Instabilities of Polysilicon Gate HfO2 MOSFETs”, Jun. 2003, IEEE Transactions of Electron Devices, vol. 50, No. 6, p. 1517-1524.
Rino Choi et al., “Fabrication of High Quality Ultra-thin HfO2Gate Dielectric MOSFETs Using Deuterium Anneal,” International Electron Devices Meeting (IEDM), pp. 613-616, Dec. 2002.

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