Flash memory device and fabricating method therefor

Details Flash memory device and fabricating method therefor Flash memory device and fabricating method therefor

2005-01-18

2005-01-18

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000

Reexamination Certificate

active

06844232

ABSTRACT:
A cell transistor of a flash memory device includes a semiconductor substrate, a source region, a drain region, a floating gate, an inter-gate insulating layer, and a control gate, wherein the floating gate has a tip protruding into an end portion of the source region. With the application of erasing voltages to the source region and the control gate, an intense electric field is induced on the tip of the floating gate. Accordingly, an erasing efficiency of the cell transistor can be enhanced.

REFERENCES:
patent: 6051465 (2000-04-01), Kato et al.
patent: 6124168 (2000-09-01), Ong
patent: 6236082 (2001-05-01), Kalnitsky et al.
patent: 6340611 (2002-01-01), Shimizu et al.
patent: 6459121 (2002-10-01), Sakamoto et al.

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