Method for forming an electronic device

Details Method for forming an electronic device Method for forming an electronic device

2005-04-26

2005-04-26

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S232000, C438S305000

Reexamination Certificate

active

06884672

ABSTRACT:
Under the present invention, a layer of amorphous silicon is formed over a layer of gate dielectric. Over the layer of amorphous silicon, a gate cap dielectric is formed. The layer of amorphous silicon is then confined by at least one spacer, which is deposited under a low temperature process. Once the at least one spacer is in place, the amorphous silicon is exposed to a temperature sufficiently high to convert the amorphous silicon to polysilicon. By waiting until the amorphous silicon is confined within the at least one spacer before converting it to polysilicon, the variation in gate length is reduced.

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