Plasma reactor

Details Plasma reactor Plasma reactor

2005-09-20

2005-09-20

Zervigon, Rudy (Department: 1763)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

C156S345430, C156S235000, C118S7230ER, C118S7230ER

Reexamination Certificate

active

06946053

ABSTRACT:
This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck). The invention addresses the uniformity problem which arises as the result of nonuniform power coupling between the wafer and the walls of the etch chamber. The solution to greatly mitigate the nonuniformity problem is to increase the impedance between the wafer and the chamber walls. This may be accomplished by placing a cylindrical dielectric wall around the wafer. Quartz is a dielectric material that is ideal for the cylindrical wall if silicon is to be etched selectively with respect to silicon dioxide, as quartz it is virtually inert under such conditions.

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M. Gross et al., “Photoresist Etching in a Hollow Cathode Reactor,” J. Vacuum Science Technology B8(6), Nov. Dec. 1990, pp. 1291-1296.

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