Method of manufacture of silicon based package

Details Method of manufacture of silicon based package Method of manufacture of silicon based package

2005-04-12

2005-04-12

Cuneo, Kamand (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S455000, C438S464000, C438S458000, C438S637000, C438S639000, C438S672000, C438S689000

Reexamination Certificate

active

06878608

ABSTRACT:
A silicon based package (SBP) is formed starting with a thick wafer, which serves as the base for the SBP, composed of silicon which has a first surface and a reverse surface which are planar. Then form an interconnection structure including multilayer conductor patterns over the first surface. Form a temporary bond between the SBP and a wafer holder, with the wafer holder being a rigid structure. Thin the wafer to a desired thickness to form an Ultra Thin Silicon Wafer (UTSW) for the SBP. Forming via holes which extend through the UTSW, forming metallization in the via holes which extends through the UTSW, making electrical contact to the interconnection structure on the first surface. Then bond the metallization in the via holes to pads of a carrier.

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Matsuo et al., “Silicon Interposer Technology for High-density Package”, Session 36, Afternoon, Wednesday, May 24, 2000, at Caesar's Palace, Las Vegas, NV, Proceedings of IEEE Electronic Components and Technology Conference, IEEE, ISBN 0780359089, 4 pages, 2000.

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