Nonvolatile semiconductor memory device and manufacturing...

Details Nonvolatile semiconductor memory device and manufacturing... Nonvolatile semiconductor memory device and manufacturing...

2005-01-11

2005-01-11

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C438S264000, C438S265000, C438S266000, C438S593000, C257S261000, C257S298000, C257S315000, C257S316000, C257S324000, C257S326000

Reexamination Certificate

active

06841444

ABSTRACT:
A nonvolatile semiconductor memory device that can be miniaturized is provided. A method of manufacturing the nonvolatile semiconductor memory device includes the steps of: forming an interlayer insulating film covering a stacked structure and a sidewall insulating film and having a top surface approximately parallel to a main surface; forming a resist pattern as a mask layer on the top surface of the interlayer insulating film; forming a groove as an opening in the interlayer insulating film to be positioned between the sidewall insulating films formed at the adjacent stacked structures; and forming a source region extending along a plurality of floating gate electrodes by implanting impurity ions from the groove to the main surface.

REFERENCES:
patent: 6730959 (2004-05-01), Hung et al.
patent: 2002-217319 (2002-08-01), None

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