Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-06
2005-09-06
Kang, Donghee (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S631000, C438S633000, C438S692000, C216S067000, C216S078000
Reexamination Certificate
active
06939796
ABSTRACT:
A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion having a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion. The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.
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Bailey III Andrew D.
Cook Joel M.
Hemker David
Lohokare Shrikant P.
Kang Donghee
Lam Research Corporation
Martine & Penilla & Gencarella LLP
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