Methods of formation of semiconductor composite gate dielectric

Details Methods of formation of semiconductor composite gate dielectric Methods of formation of semiconductor composite gate dielectric

1995-05-25

1998-01-27

Fourson, George R.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

438775, 438923, 438287, H01L 21225, H01L 213115

Patent

active

057122083

ABSTRACT:
A semiconductor dielectric (10) is formed by providing a base layer (12) having a surface. A thin interface layer (13) is formed at the surface of the base layer (12). The thin interface layer has a substantial concentration of both nitrogen and fluorine. A thermal oxide layer (14) is formed overlying the interface layer (13). A deposited dielectric layer (16) is formed overlying the thermal oxide layer (14). The deposited dielectric layer (16) is optionally densified by a thermal heat cycle. The deposited dielectric layer (16) has micropores that are misaligned to micropores in the thermal oxide layer (14) to provide enhanced features which the nitrogen/fluorine interface further improves the dielectric's features.

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