Method of making a semiconductor device having reduced junction

Details Method of making a semiconductor device having reduced junction Method of making a semiconductor device having reduced junction

1995-12-20

1998-01-27

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, H01L 21265

Patent

active

057122040

ABSTRACT:
A semiconductor device having a reduced junction capacitance of the source and drain and a method for manufacturing same. The method includes the steps of selectively forming an element separating region on a main surface of a <100> oriented semiconductor substrate of a first conductivity type, a step of providing a gate electrode on the region separated by the element separating region with an intervening insulating film, and a step of implanting impurities of a second conductivity type in regions under the source and drain regions using the gate electrode as a mask and with a predetermined angle of ion implantation to generate a channeling implantation condition.

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S. Ogura et al., "Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor", IEEE Transactions on Electron Devices, vol. ED-27, No. 8, Aug. 1980, pp. 1359-1367.

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