Semiconductor device and fabricating method thereof

Details Semiconductor device and fabricating method thereof Semiconductor device and fabricating method thereof

2005-07-19

2005-07-19

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S212000, C257S301000

Reexamination Certificate

active

06919246

ABSTRACT:
A semiconductor device and method for fabricating the same. The semiconductor device comprises a capacitor including a semiconductor substrate having a first conductive type well; a first trench formed in the semiconductor substrate; a plate electrode formed on the first trench; a capacitor insulating film formed on the plate electrode; and a storage node electrode formed in the first trench. The transistor includes a first insulating film for planarization formed on the storage node electrode; a second trench formed in the portion of the first conductive type well, which does not correspond to the first trench; a gate insulating film formed on the second trench; a gate electrode formed on the portion of the gate insulating film, located on the second trench; and drain and source regions formed on the upper and lower portions of the first conductive type well, respectively, which corresponds to the sidewall of the second trench.

REFERENCES:
patent: 6304483 (2001-10-01), Noble
patent: 6355529 (2002-03-01), Heo et al.
patent: 6432774 (2002-08-01), Heo et al.
patent: 6437388 (2002-08-01), Radens et al.
patent: 6449186 (2002-09-01), Noble
patent: 6630379 (2003-10-01), Mandelman et al.

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