Method of manufacturing semiconductor device comprising...

Details Method of manufacturing semiconductor device comprising... Method of manufacturing semiconductor device comprising...

2005-03-01

2005-03-01

Lebentritt, Michael (Department: 2824)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S653000

Reexamination Certificate

active

06861350

ABSTRACT:
Micro-miniaturized semiconductor devices are fabricated with silicon-rich tantalum silicon nitride replacement metal gate electrodes. Embodiments include removing a removable gate, depositing a layer of tantalum nitride, as by PVD at a thickness of 25 Å to 75 Å, and then introducing silicon into the deposited tantalum nitride layer by thermal soaking in silane or silane plasma treatment to form a layer of silicon-rich tantalum silicon nitride. In another embodiment, the intermediate structure is subjected to thermal soaking in silane or silane plasma treatment before and after depositing the tantalum nitride layer. Embodiments further include pretreating the intermediate structure with silane prior to depositing the tantalum nitride layer, treating the deposited tantalum nitride layer with silane, and repeating these steps a number of times to form a plurality of sub-layers of silicon-rich tantalum silicon nitride.

REFERENCES:
patent: 5998873 (1999-12-01), Blair et al.
patent: 6084280 (2000-07-01), Gardner et al.
patent: 6350675 (2002-02-01), Chooi et al.
patent: 6368923 (2002-04-01), Huang
patent: 6444512 (2002-09-01), Madhukar et al.
patent: 6596643 (2003-07-01), Chen et al.
patent: 6607958 (2003-08-01), Suguro
patent: 6680249 (2004-01-01), Lu et al.
patent: 6723635 (2004-04-01), Ngo et al.
patent: 6727560 (2004-04-01), Pan et al.
patent: 20030027393 (2003-02-01), Suguro

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