Method of manufacturing III-V group compound semiconductor

Details Method of manufacturing III-V group compound semiconductor Method of manufacturing III-V group compound semiconductor

2005-09-20

2005-09-20

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Packaging or treatment of packaged semiconductor

C257S099000

Reexamination Certificate

active

06946308

ABSTRACT:
When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula InxGayAlzN (where 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.

REFERENCES:
patent: 6440823 (2002-08-01), Vaudo et al.
patent: 2001/0031385 (2001-10-01), Hiramatsu et al.
patent: 2002/0145148 (2002-10-01), Okuyama et al.
patent: 2003/0045017 (2003-03-01), Hiramatsu et al.
patent: WO 02/01608 (2002-01-01), None
patent: WO 02/20880 (2002-03-01), None

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