Polymer, resist material and patterning method

Details Polymer, resist material and patterning method Polymer, resist material and patterning method

2005-09-20

2005-09-20

Ashton, Rosemary (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S326000, C430S905000, C430S910000, C526S264000, C526S268000, C526S271000, C526S281000, C526S319000, C526S320000

Reexamination Certificate

active

06946233

ABSTRACT:
Provided are a resist material having markedly high resolution and etching resistance of a practically usable level, and being useful for fine microfabrication; a patterning method using the resist material; and a polymer useful as a base resin for the resist material. More specifically, provided are a polymer having a weight-average molecular weight of 1,000 to 500,000, which comprises one or more repeating units selected from the group consisting of repeating units represented by formulae (1) to (3) below; and one or more repeating units of the formula (4) below; and a resist material containing the polymer.

REFERENCES:
patent: 5968713 (1999-10-01), Nozaki et al.
patent: 6013416 (2000-01-01), Nozaki et al.
patent: 6200725 (2001-03-01), Takechi et al.
patent: 6312867 (2001-11-01), Kinsho et al.
patent: 6329125 (2001-12-01), Takechi et al.
patent: 6391520 (2002-05-01), Nakano et al.
patent: 2003/0054286 (2003-03-01), Sato et al.

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