Method of manufacturing flash memory device

Details Method of manufacturing flash memory device Method of manufacturing flash memory device

2005-03-22

2005-03-22

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S259000, C438S270000, C438S268000

Reexamination Certificate

active

06869848

ABSTRACT:
A method of manufacturing a flash memory device, in which a spike annealing is performed after an ion implantation for controlling a threshold voltage. Therefore, it is possible to obtain a uniform and stabilized doping profile for controlling a threshold voltage, to use BF2ions as a dose for controlling a threshold voltage to obtain a shallow channel junction, to obtain different doping profiles in the channel junction depending on the process conditions and the atmosphere in the spike annealing equipment, and to control a doping profile for controlling a threshold voltage.

REFERENCES:
patent: 6087222 (2000-07-01), Jung Lin et al.
patent: 6124608 (2000-09-01), Liu et al.
patent: 20030094636 (2003-05-01), Maeda

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