Method for depositing a low dielectric constant film

Details Method for depositing a low dielectric constant film Method for depositing a low dielectric constant film

2005-05-24

2005-05-24

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S780000, C438S787000, C438S788000, C438S790000

Reexamination Certificate

active

06897163

ABSTRACT:
A method for depositing a low dielectric constant film is provided. The low dielectric constant film includes at least one silicon oxycarbide layer and at least one substantially silicon-free layer comprising carbon and hydrogen. The layers are deposited from a gas mixture including an organosilicon compound and a silicon-free hydrocarbon-based compound. The low dielectric constant film is deposited by a plasma process than includes pulses of RF power.

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