Method of forming self-aligned contacts

Details Method of forming self-aligned contacts Method of forming self-aligned contacts

2005-09-06

2005-09-06

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S180000, C438S229000, C438S364000

Reexamination Certificate

active

06939768

ABSTRACT:
A method of forming self-aligned contacts that includes providing at least one stacked-gate structure on a semiconductor substrate, forming a first dielectric layer on the stacked-gate structure and the semiconductor substrate, forming a second dielectric layer on the first dielectric layer, the second dielectric layer being etch selective relative to the first dielectric layer, etching the second dielectric layer to expose a portion of the first dielectric layer formed on a top surface and along at least a portion of upper sidewalls of the stacked-gate structure, removing the exposed portion of the first dielectric layer, and forming a third dielectric layer on the sidewalls of the stacked-gate structure.

REFERENCES:
patent: 4029522 (1977-06-01), De La Moneda
patent: 6043116 (2000-03-01), Kuo
patent: 6667230 (2003-12-01), Chen et al.

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