Method for manufacturing semiconductor device having...

Details Method for manufacturing semiconductor device having... Method for manufacturing semiconductor device having...

2005-01-04

2005-01-04

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S791000

Reexamination Certificate

active

06838327

ABSTRACT:
A semiconductor device includes a gate insulating film formed on a silicon substrate, a gate electrode formed on the gate insulating film, and an electrical insulating film formed on the gate electrode. The electrical insulating film includes a N—H bond and substantially no Si—H bond. The electrical insulating film is formed by using tetrachlorosilane (SiCl4) that contains no hydrogen (H) as a source gas for a silicon nitride film. Thus, the semiconductor device can suppress residual hydrogen in the gate insulating film and prevent interface defects of the gate insulating film, a shift in the threshold voltage of a transistor, and the degradation of an on-state current. A method for manufacturing the semiconductor device also is provided.

REFERENCES:
patent: 6333547 (2001-12-01), Tanaka et al.
patent: 6355582 (2002-03-01), Hosoda et al.
patent: 20020024119 (2002-02-01), Tanaka et al.
patent: 20020055273 (2002-05-01), Hasegawa
patent: 20030222318 (2003-12-01), Tanaka et al.
patent: 0 431 878 (1991-06-01), None
patent: 1184227 (1970-03-01), None
patent: 11-261059 (1999-09-01), None
patent: 2001-85426 (2001-03-01), None
“Realization of High Performance Dual Gate DRMs without Boron Penetration by Application of Tetrachlorosilane Silicon Nitride Films”, Tanaka M et al.; 2001 Symposium on VLSI Technology Digest of Technical Papers Kyoto, Japan, Jun. 12, 2001 pp. 123-124, XP010552030 ISBN: 4-89114-012-7.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3412958