Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
2005-05-31
2005-05-31
McDonald, Rodney G. (Department: 1753)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298030, C204S298060
Reexamination Certificate
active
06899799
ABSTRACT:
Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.
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Hui Ying Yin
Ngan Kenny King-Tai
Ramaswami Seshadri
Applied Materials Inc.
Konrad Raynes & Victor
McDonald Rodney G.
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