Method of making a high voltage rectifier for an integrated circ

Details Method of making a high voltage rectifier for an integrated circ Method of making a high voltage rectifier for an integrated circ

1996-05-13

1997-04-22

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438286, 438275, H01L 2170, H01L 2700

Patent

active

056228864

ABSTRACT:
A high voltage alternating current rectifier circuit for an NMOS or CMOS transistor environment in which four N-channel transistors are simultaneously fabricated distant from a utilization circuit, such as one or more EEPROM transistors. The four N-channel transistors have lightly doped sources and drains formed prior to the time gates are formed, the doping concentrations and the thickness of oxide overlying the gates selected to establish breakdown voltages exceeding 20 volt peaks. This allows an input spiral antenna or other inductor to be used for coupling radio frequency energy and signals from a remote source to a chip having a utilization circuit employing the rectifier circuit as a source of power.

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patent: 5061654 (1991-10-01), Shimizu et al.
patent: 5166676 (1992-11-01), Milheiser
patent: 5241204 (1993-08-01), Kayama

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