Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-04-12

2005-04-12

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S681000, C438S785000

Reexamination Certificate

active

06878625

ABSTRACT:
In a semiconductor device manufacturing apparatus comprising at least a reaction chamber and a substrate holder located within the reaction chamber, a silicon nitride film is deposited on the substrate holder within the reaction chamber, and then, a semiconductor substrate is put on the silicon nitride film of the substrate holder within the reaction chamber. A titanium film or a titanium nitride film is deposited on the semiconductor substrate within the reaction chamber, by a chemical vapor deposition process using a titanium halide as a raw material gas.

REFERENCES:
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 58025244 (1983-02-01), None
patent: 63-53272 (1988-03-01), None
patent: 2-237111 (1990-09-01), None
patent: 3183151 (1991-08-01), None
patent: 05-315267 (1993-11-01), None

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