Methods for fabricating group III nitride compound...

Details Methods for fabricating group III nitride compound... Methods for fabricating group III nitride compound...

2005-03-01

2005-03-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S201000

Reexamination Certificate

active

06861305

ABSTRACT:
The present invention provides a Group III nitride compound semiconductor with suppressed generation of threading dislocations. A GaN layer31is subjected to etching, so as to form an island-like structure having a shape of, for example, dot, strip, or grid, thereby providing a trench/mesa structure, and a mask4is formed at the bottom of the trench such that the upper surface of the mask4is positioned below the top surface of the GaN layer31. A GaN layer32is lateral-epitaxially grown with the top surface31aof the mesa and sidewalls31bof the trench serving as nuclei, to thereby bury the trench, and then epitaxial growth is effected in the vertical direction. In the upper region of the GaN layer32formed above the mask4through lateral epitaxial growth, propagation of threading dislocations contained in the GaN layer is31can be prevented.

REFERENCES:
patent: 5185290 (1993-02-01), Aoyagi et al.
patent: 5798536 (1998-08-01), Tsutsui
patent: 6051849 (2000-04-01), Davis et al.
patent: 6110277 (2000-08-01), Braun
patent: 6121121 (2000-09-01), Koide
patent: 6146457 (2000-11-01), Solomon
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6274518 (2001-08-01), Yuri et al.
patent: 6319742 (2001-11-01), Hayashi et al.
patent: 6329667 (2001-12-01), Ota et al.
patent: 6355497 (2002-03-01), Romano et al.
patent: 6365921 (2002-04-01), Watanabe et al.
patent: 6582986 (2003-06-01), Kong et al.
patent: 0 551 721 (1993-07-01), None
patent: 0 779 666 (1997-06-01), None
patent: WO 9847170 (1998-10-01), None
patent: 0 951 055 (1999-10-01), None
patent: 0 993 048 (2000-04-01), None
patent: 1 045 431 (2000-10-01), None
patent: 1 059 661 (2000-12-01), None
patent: 1 059 677 (2000-12-01), None
patent: 49-149679 (1973-04-01), None
patent: 48-95181 (1973-12-01), None
patent: 51-137393 (1976-11-01), None
patent: 55-34646 (1978-08-01), None
patent: 57-115849 (1982-07-01), None
patent: 58-33882 (1983-02-01), None
patent: 1-316459 (1989-12-01), None
patent: 3-133182 (1991-06-01), None
patent: 4-10665 (1992-01-01), None
patent: 4-84418 (1992-03-01), None
patent: 4-303920 (1992-10-01), None
patent: 05-041536 (1993-02-01), None
patent: 5-110206 (1993-04-01), None
patent: 5-283744 (1993-10-01), None
patent: 05-343741 (1993-12-01), None
patent: 6-196757 (1994-07-01), None
patent: 7-249830 (1995-09-01), None
patent: 07-273367 (1995-10-01), None
patent: 8-64791 (1996-03-01), None
patent: 8-102549 (1996-04-01), None
patent: 8-116090 (1996-05-01), None
patent: 8-222812 (1996-08-01), None
patent: 8-274411 (1996-10-01), None
patent: 9-162125 (1997-06-01), None
patent: 10-312971 (1998-11-01), None
patent: 10-321954 (1998-12-01), None
patent: 11-31864 (1999-02-01), None
patent: 11-043398 (1999-02-01), None
patent: 11-135770 (1999-05-01), None
patent: 11-135832 (1999-05-01), None
patent: 11-145516 (1999-05-01), None
patent: 11-145519 (1999-05-01), None
patent: 11-191533 (1999-07-01), None
patent: 11-191657 (1999-07-01), None
patent: 11-191659 (1999-07-01), None
patent: 11-219910 (1999-08-01), None
patent: 11-251632 (1999-09-01), None
patent: 11-260737 (1999-09-01), None
patent: 11-274082 (1999-10-01), None
patent: 11-312825 (1999-11-01), None
patent: 11-329971 (1999-11-01), None
patent: 11-330546 (1999-11-01), None
patent: 11-340508 (1999-12-01), None
patent: 2000-21789 (2000-01-01), None
patent: 2000-44121 (2000-02-01), None
patent: 2000-091253 (2000-03-01), None
patent: 2000-106455 (2000-04-01), None
patent: 2000-106473 (2000-04-01), None
patent: 2000-124500 (2000-04-01), None
patent: 2000-150959 (2000-05-01), None
patent: 2000-174393 (2000-06-01), None
patent: 2000-232239 (2000-08-01), None
patent: 2000-244061 (2000-09-01), None
patent: 2000-261106 (2000-09-01), None
patent: 2000-277437 (2000-10-01), None
patent: 2000-299497 (2000-10-01), None
patent: 2000-357663 (2000-12-01), None
patent: 2000-357843 (2000-12-01), None
patent: 2001-60719 (2001-03-01), None
patent: 2001-093837 (2001-04-01), None
patent: 2001-111174 (2001-04-01), None
patent: 2001-122693 (2001-05-01), None
patent: 2001-176813 (2001-06-01), None
patent: 2001-257193 (2001-09-01), None
patent: WO 9711518 (1997-03-01), None
patent: WO 9901594 (1999-01-01), None
patent: WO 0004615 (2000-01-01), None
patent: WO 0055893 (2000-09-01), None
patent: WO 02058120 (2002-07-01), None
Ujiie et al., “Epitaxial Lateral Overgrowth of GaAs on a Si Substrate”Japanese Journal of Applied Physics vol. 28, No. 3, Mar., 1989, pp. L337-L339.
Partial Translation of the Office Action for Japanese Patent Application No. 9-311518 dated Jun. 10, 2003.
Nam et al., “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy”, pp. 2638-2640, Appl. Phys. Lett. 71 (18), Nov. 3, 1997.
Hiramatsu et al., “Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy”, pp. 104-111, Materials Science and Engineering B59 (1999).
Akasaki et al., “Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties GaN and Ga1-xA1xN . . . Movpe” pp. 209-219, Journal of Crystal Growth 98 (1989) North-Holland, Amsterdam.
Yang et al., High quality Gan-InGaN heterostructure grown on (111) silicon substrates; pp. 3566-3568, Appl. Phys. Lett. 69 (23), Dec. 2, 1996.
Wolf et al., “Silicon Processing for the VLSI Era”, vol. 1, Lattice Press, 1986, p. 5.
Luther et al., “Titanium and titanium nitride contacts to n-type gallium nitride”, Semicond. Sci. Technol. 13 (1998) pp. 1322-1327.
Dimitriadis et al., “Contacts of titanium nitride to—and p-type gallium nitride films”, Solid-State Electronics 43 (1999), pp. 1969-1972.
Zheleva et al., “Pendeo-Epitaxy—A New Approach for Lateral Growth of Galium Nitride Structures”, MRS Internet J. Nitride Semicond. Res. 4SI, G3.38 (1999), 6 pages total.
PCT Form 210 (PCT/JP02/05446).
PCT Form 210 (PCT/JP02/02628).
PCT Form 210 (PCT/JP02/01159).
PCT Form 210 (PCT/JP01/01928).
PCT Form 210 (PCT/JP01/02695).
PCT Form 210 (PCT/JP00/09120).
PCT Form 210 (PCT/JP01/01396).
PCT Form 210 (PCT/JP01/01178).
PCT Form 210 (PCT/JP01/01663).
PCT Form 210 (PCT/JP00/09121).
PCT Form 210 (PCT/JP00/09220).
PCT Forms 338 and 409 (PCT/JP01/02695) and translation thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP01/01663) and translation thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP00/09120) and translation thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP00/09121) and translation thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP01/01928) and translation thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP01/01396) and translation thereof.
European Search Report (EP 27057) Jul. 18, 2000.
European Search Report (EP 27279) Feb. 15, 2002.
Tsvetanka S. Zehleva, “Pendeo-Epitaxy: A New Approach for Lateral Growth of Gallium Nitride Films”, Journal of Electronic Materials, vol. 28, No. 4, pp. L5-L8, Apr. 1999.
T.S. Zheleva, “Pendeo-Epitaxy versus Lateral Epitaxial Overgrowth of GaN: A Comparative Study via Finite Element Analysis”, physics status solidl (a), vol. 176, No. 1, pp. 545-551, Nov. 1999.
Shiro Uchida, “A1Ga1nN based Laser Diodes”, Proceedings of SPIE—The International Society of Optical Engineering, vol. 3947, pp. 156-164, Jan. 2000.
PCT Forms 338 and 409 (IPER) (PCT/JP02/05446) and translation thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP02/02628) and translation thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP02/01159) and translation thereof.

Affiliated with

Also associated with

Rating

Methods for fabricating group III nitride compound... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for fabricating group III nitride compound..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for fabricating group III nitride compound... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3410606