Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-26
2005-04-26
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S212000, C438S237000, C438S270000, C438S272000, C438S589000
Reexamination Certificate
active
06884683
ABSTRACT:
A trench DMOS transistor having overvoltage protection includes a substrate of a first conductivity type and a body region of a second conductivity type formed over the substrate. At least one trench extends through the body region and the substrate. An insulating layer lines the trench and overlies the body region. A conductive electrode is deposited in the trench so that it overlies the insulating layer. A source region of the first conductivity type is formed in the body region adjacent to the trench. An undoped polysilicon layer overlies a portion of the insulating layer. A plurality of cathode regions of the first conductivity type are formed in the undoped polysilicon layer. At least one anode region is in contact with adjacent ones of the plurality of cathode regions.
REFERENCES:
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5100829 (1992-03-01), Fay et al.
patent: 5541425 (1996-07-01), Nishihara
patent: 5602046 (1997-02-01), Calafut et al.
patent: 5866931 (1999-02-01), Bulucea et al.
patent: 5959345 (1999-09-01), Fruth et al.
patent: 6268242 (2001-07-01), Williams et al.
patent: 6413822 (2002-07-01), Williams et al.
patent: 6455378 (2002-09-01), Inagawa et al.
patent: 20020096710 (2002-07-01), Inagawa et al.
patent: 20020168821 (2002-11-01), Williams et al.
Wolf, Ph.D., Stanley, Richard N. Tauber, Ph.D., “Silicon Epitaxial Film Growth,” Silicon Processing for the VLSI Era—vol. 1: Process Technology, Lattice Press, 1986, p. 124.
Hshieh Fwu-Iuan
So Koon Chong
General Semiconductor Inc.
Mayer Fortkort & Williams PC
Mayer, Esq. Stuart H.
Thomas Toniae M.
Wilczewski Mary
LandOfFree
Trench DMOS transistor having a zener diode for protection... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Trench DMOS transistor having a zener diode for protection..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Trench DMOS transistor having a zener diode for protection... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3410565