Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S359000, C257S363000, C257S379000, C257S380000
Reexamination Certificate
active
06873016
ABSTRACT:
A semiconductor device including a resistor and a method of forming the same. In the semiconductor device, a conductive pattern, which connects source regions, and a resistor are formed of the same material, which can be polysilicon. In the method, the conductive pattern and the resistor are simultaneously formed. Thus, it is possible to obtain a constant sheet resistance without an additional photo mask.
REFERENCES:
patent: 4416049 (1983-11-01), McElroy
patent: 5554873 (1996-09-01), Erdeljac et al.
patent: 6172389 (2001-01-01), Sakoh
patent: 6228714 (2001-05-01), Choi
patent: 6777752 (2004-08-01), Osanai et al.
patent: 1020020040094 (2002-05-01), None
English language abstract to Korean Publication No. 1020020040094.
Kim Hong-Soo
Park Jin-Taek
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Tran Thien F
LandOfFree
Semiconductor device and method of forming the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method of forming the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of forming the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3406814