Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-18
2005-01-18
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S591000, C438S780000, C438S783000, C438S786000, C438S787000, C438S790000
Reexamination Certificate
active
06844234
ABSTRACT:
A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.
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Eguchi Kazuhiro
Inumiya Seiji
Tsunashima Yoshitaka
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson George
Garcia Joannie Adelle
Kabushiki Kaisha Toshiba
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