Structure and fabricating method to make a cell with...

Details Structure and fabricating method to make a cell with... Structure and fabricating method to make a cell with...

2005-05-17

2005-05-17

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06893917

ABSTRACT:
A new structure is disclosed for semiconductor devices with which contact regions are self-aligned to conductive lines. Openings to a gate oxide layer, in partially fabricated devices on a silicon substrate, having insulating sidewalls. First polysilicon lines disposed against the insulating sidewalls extend from below the top of the openings to the gate oxide layer. Oxide layers are grown over the top and exposed sides of the first polysilicon lines serving to insulate the first polysilicon lines. Polysilicon contact regions are disposed directly over and connect to silicon substrate regions through openings in the gate oxide layer and fill the available volume of the openings. Second polysilicon lines connect to the contact regions and are disposed over the oxide layers grown on the first polysilicon lines.

REFERENCES:
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patent: 6242308 (2001-06-01), Hsieh et al.
patent: 6259131 (2001-07-01), Sung et al.
patent: 6593187 (2003-07-01), Hsieh
patent: 6610570 (2003-08-01), Chen

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