Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-04-19
2005-04-19
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S786000, C427S255393
Reexamination Certificate
active
06881636
ABSTRACT:
The invention includes methods of forming deuterated silicon nitride-containing materials from at least one deuterated nitrogen compound in combination with one or more silicon-containing compounds that do not contain hydrogen isotopes. Suitable deuterated nitrogen compounds can comprise, for example, NH2D, NHD2and ND3. Suitable silicon-containing compounds include, for example, SiCl4and Si2Cl6. Deuterated silicon nitride-containing materials of the present invention can be incorporated into, for example, transistor devices. The transistor devices can be utilized in DRAM cells, which in turn can be utilized in electronic systems.
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Breiner Lyle D.
Weimer Ronald A.
Smoot Stephen W.
Wells St. John P.S.
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