Low-GIDL MOSFET structure and method for fabrication

Details Low-GIDL MOSFET structure and method for fabrication Low-GIDL MOSFET structure and method for fabrication

2005-04-12

2005-04-12

Thai, Luan (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S216000, C438S197000

Reexamination Certificate

active

06878582

ABSTRACT:
A low-GIDL current MOSFET device structure and a method of fabrication thereof which provides a low-GIDL current. The MOSFET device structure contains a central gate conductor whose edges may slightly overlap the source/drain diffusions, and left and right side wing gate conductors which are separated from the central gate conductor by a thin insulating and diffusion barrier layer.

REFERENCES:
patent: 4714519 (1987-12-01), Pfiester
patent: 5091763 (1992-02-01), Sanchez
patent: 5210435 (1993-05-01), Roth et al.
patent: 5256585 (1993-10-01), Bae
patent: 5256586 (1993-10-01), Choi et al.
patent: 5314834 (1994-05-01), Mazure et al.
patent: 5510648 (1996-04-01), Davies et al.
patent: 5793089 (1998-08-01), Fulford et al.
patent: 5808347 (1998-09-01), Kurimoto et al.
patent: 5831319 (1998-11-01), Pan
patent: 5877058 (1999-03-01), Gardner et al.
patent: 6090671 (2000-07-01), Balasubramanyam et al.
patent: 6090693 (2000-07-01), Gonzalez et al.
patent: 6097069 (2000-08-01), Brown et al.
patent: 6097070 (2000-08-01), Mandelman et al.
patent: 6100143 (2000-08-01), Brown et al.
patent: 6207507 (2001-03-01), Wang
patent: 6251737 (2001-06-01), Lee
patent: 6259142 (2001-07-01), Dawson et al.
patent: 6312995 (2001-11-01), Yu
patent: 20010033006 (2001-10-01), Heineck et al.

Affiliated with

Also associated with

Rating

Low-GIDL MOSFET structure and method for fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-GIDL MOSFET structure and method for fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-GIDL MOSFET structure and method for fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3404276