Method of forming a split-gate memory cell with a tip in the...

Details Method of forming a split-gate memory cell with a tip in the... Method of forming a split-gate memory cell with a tip in the...

2005-03-01

2005-03-01

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S257000

Reexamination Certificate

active

06861306

ABSTRACT:
A split-gate FLASH memory cell is formed with a floating gate that has a tip in the middle of the floating gate. The method of the present invention forms the tip to have a substantially constant radius of curvature, tip angle, and distance to the overlying tunneling oxide. As a result, the tip of the present invention increases the localized enhancement of the electric field.

REFERENCES:
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5045488 (1991-09-01), Yeh
patent: 5067108 (1991-11-01), Jenq
patent: 5087583 (1992-02-01), Hazani
patent: 5242848 (1993-09-01), Yeh
patent: 5278087 (1994-01-01), Jenq
patent: 5554553 (1996-09-01), Harari
patent: 5744853 (1998-04-01), Quek et al.
patent: 5866455 (1999-02-01), Wu
patent: 5972750 (1999-10-01), Shirai et al.
patent: 6136652 (2000-10-01), Hazani
patent: 6137131 (2000-10-01), Wu
patent: 6242308 (2001-06-01), Hsieh et al.

Affiliated with

Also associated with

Rating

Method of forming a split-gate memory cell with a tip in the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a split-gate memory cell with a tip in the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a split-gate memory cell with a tip in the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3404245