Front side seal to prevent germanium outgassing

Details Front side seal to prevent germanium outgassing Front side seal to prevent germanium outgassing

2005-07-26

2005-07-26

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S522000, C438S530000, C438S660000, C438S663000, C438S680000, C438S685000, C438S761000, C438S763000, C438S785000, C438S787000, C438S791000, C438S923000, C438S933000

Reexamination Certificate

active

06921709

ABSTRACT:
A method of manufacturing an integrated circuit having a gate structure above a substrate that includes germanium utilizes at least one layer as a seal. The layer advantageously can prevent back sputtering and outdiffusion. A transistor can be formed in the substrate by doping through the layer. Another layer can be provided below the first layer. Layers of silicon dioxide, silicon carbide, silicon nitride, titanium, titanium nitride, titanium/titanium nitride, tantalum nitride, and silicon carbide can be used.

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