Semiconductor device having different thickness gate oxides

Details Semiconductor device having different thickness gate oxides Semiconductor device having different thickness gate oxides

2005-07-05

2005-07-05

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S411000

Reexamination Certificate

active

06914285

ABSTRACT:
A peripheral circuit of a semiconductor device, including a circuit further including a plurality of electronic components using same source voltage, wherein the plurality of electronic components have gate oxides of different thicknesses. The plurality of electronic components may be for a delay chain, a directional delay and a power switch.

REFERENCES:
patent: 6635934 (2003-10-01), Hidaka
patent: 6670990 (2003-12-01), Kochi et al.
patent: 11283369 (1999-10-01), None
patent: 20010050100 (2001-06-01), None

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