Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-04
2005-01-04
Le, Vu A. (Department: 2824)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S238000, C438S239000, C438S243000
Reexamination Certificate
active
06838336
ABSTRACT:
Embodiments include a semiconductor device and a method for manufacturing the same, which simplify the manufacturing steps and provide split gate type non-volatile memory transistors and other device elements mounted on the same chip. In one method, the step of forming the lower electrode of a capacitor540and the step of forming a floating gate40of a memory transistor400are conducted in different steps. As a result, characteristics of the floating gate40and characteristics of the lower electrode54can be independently optimized. On the other hand, the step of forming a control gate36of the memory transistor400and the step of forming an upper electrode58of the capacitor540are conducted in the same step. As a result, the manufacturing process is simplified.
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Japanese Patent Office Action for Application No. 11-263279, dated Jan. 6, 2004, which lists the six references listed above.
Konrad Raynes & Victor LLP
Le Vu A.
Raynes Alan S.
Smith Brad
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