Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-01
2005-03-01
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000
Reexamination Certificate
active
06861314
ABSTRACT:
There is provided, according to one embodiment of this invention, a semiconductor memory device including first memory elements to store a first state or a second state according to a change in resistance value, each of the first memory elements including one terminal and the other terminal, the first memory elements arranged parallel with each other, a first wiring connected with the one terminal of each of the first memory elements, and a second wiring formed in parallel with the first wiring and connected with the other terminal of each of the first memory elements, wherein the first state or the second state stored in one of selected from the first memory elements is read out by delivering an electric current from one of the first and second wirings via the one of selected from the first memory elements to the other of the first and second wirings.
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Kabushiki Kaisha Toshiba
Nhu David
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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