Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-05
2005-07-05
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S623000, C438S638000
Reexamination Certificate
active
06913992
ABSTRACT:
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on the substrate, wherein the barrier layer comprises silicon and carbon and has a dielectric constant less than 4, depositing a dielectric initiation layer adjacent the barrier layer, and depositing a first dielectric layer adjacent the dielectric initiation layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
REFERENCES:
patent: 5087959 (1992-02-01), Omori et al.
patent: 5554570 (1996-09-01), Maeda et al.
patent: 5817572 (1998-10-01), Chiang et al.
patent: 5818071 (1998-10-01), Loboda et al.
patent: 5926740 (1999-07-01), Forbes et al.
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 6124641 (2000-09-01), Matsuura
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6340628 (2002-01-01), Van Cleemput et al.
patent: 6409238 (2002-06-01), Mikenis et al.
patent: 6436824 (2002-08-01), Chooi et al.
patent: 6486061 (2002-11-01), Xia et al.
patent: 6489238 (2002-12-01), Tsui
patent: 6511909 (2003-01-01), Yau et al.
patent: 6521300 (2003-02-01), Hsieh et al.
patent: 6528423 (2003-03-01), Catabay et al.
patent: 6537733 (2003-03-01), Campana et al.
patent: 6541369 (2003-04-01), Huang et al.
patent: 6570256 (2003-05-01), Conti et al.
patent: 6645883 (2003-11-01), Yamamoto et al.
patent: 6656837 (2003-12-01), Xu et al.
patent: 6673725 (2004-01-01), Shioya et al.
patent: 2002/0054962 (2002-05-01), Huang
patent: 2002/0054982 (2002-05-01), Dietrich et al.
patent: 2002/0098714 (2002-07-01), Grill et al.
patent: 2002/0182894 (2002-12-01), Andideh
patent: 2003/0003765 (2003-01-01), Gibson, Jr. et al.
patent: 2003/0022526 (2003-01-01), Vyvoda et al.
patent: 2003/0032274 (2003-02-01), Daniels et al.
patent: 2003/0035904 (2003-02-01), Hsieh et al.
patent: 2003/0077916 (2003-04-01), Xu et al.
patent: 2003/0129827 (2003-07-01), Lee et al.
patent: 2003/0139062 (2003-07-01), Grill et al.
PCT Partial Search Report, dated Oct. 15, 2004 (AMAT/7838.PC), 6 pages.
U.S. Appl. No. 09/553,461, filed Apr. 19, 2000.
U.S. Appl. No. 09/679,843, filed Oct. 5, 2000.
PCT International Search Report for PCT/US2004/006849, dated Jan. 19, 2005 (AMAT/7838.PC).
PCT International Written Opinion for PCT/US2004/006849, dated Jan. 19, 2005 (AMAT/7838.PC).
Nguyen Son Van
Schmitt Francimar Campana
Venkataraman Shankar
Xia Li-Qun
Applied Materials Inc.
Moser Patterson & Sheridan
Trinh Michael
LandOfFree
Method of modifying interlayer adhesion does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of modifying interlayer adhesion, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of modifying interlayer adhesion will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3395495