Nonvolatile memory with undercut trapping structure

Details Nonvolatile memory with undercut trapping structure Nonvolatile memory with undercut trapping structure

2005-04-26

2005-04-26

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S344000, C257S387000, C257S388000

Reexamination Certificate

active

06885072

ABSTRACT:
The present invention discloses a nonvolatile memory with undercut trapping structure, the nonvolatile memory comprising a semiconductor substrate. A gate oxide is formed on the semiconductor substrate. A gate structure is formed on the gate oxide, wherein the gate structure including a undercut structure formed at lower portion of the gate structure and inwardly into the gate structure. An isolation layer is formed over the sidewall of the gate structure. First spacers are formed on the sidewall of the isolation layer and filled into the undercut structure for storing carrier and source and drain regions formed adjacent to the gate structure and under the undercut structure. Salicide is formed on the gate structure and the source and drain regions.

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