Methods of forming source/drain regions using multilayer...

Details Methods of forming source/drain regions using multilayer... Methods of forming source/drain regions using multilayer...

2005-04-12

2005-04-12

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S595000, C438S655000, C257S384000

Reexamination Certificate

active

06878597

ABSTRACT:
Methods of forming a source/drain region can include the steps of forming a gate electrode on a substrate and forming a lightly doped source/drain region in the substrate self-aligned to the gate electrode. A first spacer can be formed on a side wall of the gate electrode. A second spacer can be formed on the first spacer on the side wall separate from the first spacer to provide a multilayer spacer on the side wall. A heavily doped source/drain region can be formed in the substrate self-aligned to the multilayer spacer. Related structures are also disclosed.

REFERENCES:
patent: 5763312 (1998-06-01), Jeng et al.
patent: 6004852 (1999-12-01), Yeh et al.
patent: 6017784 (2000-01-01), Ohta et al.
patent: 6153457 (2000-11-01), Kuo
patent: 6329225 (2001-12-01), Rodder
patent: 6380053 (2002-04-01), Komatsu
patent: 6693013 (2004-02-01), Bae et al.

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