Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-17
2005-05-17
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C117S104000
Reexamination Certificate
active
06893965
ABSTRACT:
A method of producing a semiconductor device in which a film is formed on a substrate by a chemical vapor deposition (CVD) process, the method comprising purifying a source gas for a film to be formed by selectively removing at least one of components contained in the source gas, which does not pertain to reactions for the deposition of the film, based on the difference in molecular size between the component to be removed and other components.
REFERENCES:
patent: 4564509 (1986-01-01), Shealy et al.
patent: 5104425 (1992-04-01), Rao et al.
patent: 5211758 (1993-05-01), Ota
patent: 5656382 (1997-08-01), Nashimoto
patent: 5895521 (1999-04-01), Otsuka et al.
patent: 6126996 (2000-10-01), Kirlin et al.
patent: 6579509 (2003-06-01), Otsuka et al.
patent: 6602344 (2003-08-01), Natori et al.
patent: 20030056726 (2003-03-01), Holst et al.
patent: 63-119521 (1988-05-01), None
patent: 2-47827 (1990-02-01), None
Maruyama Kenji
Sakamoto Yoshiaki
Dolan Jennifer M.
Jr. Carl Whitehead
Westerman Hattori Daniels & Adrian LLP
LandOfFree
Method of producing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3393417