Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2005-03-29

2005-03-29

Chaudhari, Chandra (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S958000

Reexamination Certificate

active

06872617

ABSTRACT:
There are provided the steps of forming a first insulating film over a semiconductor substrate, forming a capacitor having a lower electrode, a ferroelectric layer, and an upper electrode over the first insulating film, and growing a second insulating film over the first insulating film and the capacitor by using a mixed gas containing a compound gas of oxygen and nitrogen, TEOS, and oxygen. Accordingly, characteristics of the capacitor can be improved irrespective of the capacitor forming position on the insulating layer.

REFERENCES:
patent: 5624864 (1997-04-01), Arita et al.
patent: 5795821 (1998-08-01), Bacchetta et al.
patent: 6162723 (2000-12-01), Tanaka
patent: 6432845 (2002-08-01), Morozumi
patent: 20010023080 (2001-09-01), Koo
patent: 20020061620 (2002-05-01), Hikosaka et al.
patent: 1 061 573 (2000-12-01), None
patent: 7-263637 (1995-10-01), None
patent: 11-330390 (1999-11-01), None
patent: 2001-60669 (2001-03-01), None

Affiliated with

Also associated with

Rating

Semiconductor device manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device manufacturing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3390695