Single poly EEPROM with improved coupling ratio

Details Single poly EEPROM with improved coupling ratio Single poly EEPROM with improved coupling ratio

2005-05-24

2005-05-24

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06897113

ABSTRACT:
A semiconductor device (200) comprising a semiconductor substrate (210) having a well (220) located therein and a first dielectric (250) located over the well (220). The semiconductor substrate (210) is doped with a first type dopant, and the well (220) is doped with a second type dopant opposite to that of the first type dopant. The semiconductor device (200) also comprises first and second electrodes (310, 320), wherein at least the first electrodes (310) are located over the well (220) and first dielectric (250). A second dielectric (510) may be located between the first and second electrodes (310, 320).

REFERENCES:
patent: 6472706 (2002-10-01), Widdershoven et al.
patent: 6509606 (2003-01-01), Merrill et al.
patent: 6558997 (2003-05-01), Noro et al.
patent: 6624026 (2003-09-01), Lin et al.

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