Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-10
2005-05-10
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S099000, C438S287000, C438S591000
Reexamination Certificate
active
06890806
ABSTRACT:
A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.
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Cerofolini Gianfranco
Ferla Giuseppe
Han Hai
Jorgenson Lisa K.
Nguyen Tuan H.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
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