Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-26
2005-07-26
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S197000, C438S218000, C438S225000, C438S227000, C438S298000, C257S336000, C257S344000
Reexamination Certificate
active
06921701
ABSTRACT:
A method of forming a semiconductor device includes forming a body region of a semiconductor substrate and forming a drift region adjacent at least a portion of the body region. A dopant is used to form the drift region. The dopant may comprise phosphorous. The method also includes forming a field oxide structure adjacent a portion of the drift region and a portion of a drain region. The field oxide structure is located between a gate electrode region and the drain region and is spaced apart from the gate electrode region. Atoms of the dopant accumulate adjacent a portion of the field oxide structure, forming an intermediate-doped region adjacent a portion of the field oxide structure. The method includes forming a gate oxide adjacent a portion of the body region and forming a gate electrode adjacent a portion of the gate oxide.
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Brady III Wade James
Lebentritt Michael
Pompey Ron
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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