Method for manufacturing a memory element

Details Method for manufacturing a memory element Method for manufacturing a memory element

Filed on

2005-07-12

Date issued

2005-07-12

Examiner

Dang, Phuc T. (Department: 2818)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

C438S780000

Type

Reexamination Certificate

Status

active

Patent number

06916696

Description

ABSTRACT:
A method for manufacturing the memory device by plasma decomposition of sulfur dioxide. A first copper electrode having a surface is provided. The surface of the first copper electrode may be made amorphous. A copper sulfide layer, CuxS, where 1≦x≦2, is disposed on the copper surface by decomposing sulfur dioxide in an ambient containing excess hydrogen. The copper sulfide layer may be is cuprous sulfide or cupric sulfide. A second copper electrode is coupled to the copper sulfide layer.

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